| Package | TO-220-3 |
| Transistor Polarity | P |
| Maximum Drain Source Voltage | -100 |
| Maximum Continuous Drain Current | -6 A |
| Maximum Gate Source Voltage | ±20V |
| Power Dissipation | 60 W |
| Number of Elements per Chip | 1 |
| Maximum Forward Voltage | -100VDC |
| Output Power | 40W |
| Peak Non-Repetitive Surge Current | -24A |
| Maximum Reverse Current | -25uA |
| Channel Mode | P-Channel Enhancement |
| Peak Reverse Recovery Time | 100ns |
| Channel Type | P |
| Repetitive Peak Reverse Voltage | -100VDC |
| Configuration | Single |
| Maximum Drain Source Resistance | 0.6 Ohms@10V |
| Category | Power MOSFET |
| Maximum Forward Current | -6A |
| Typical Fall Time | 25ns |
| Typical Gate Charge @ Vgs | 18nC @10V |
| Typical Input Capacitance @ Vds | 390pF@25V |
| Typical Rise Time | 29ns |
| Typical Turn-Off Delay Time | 21ns |
| Typical Turn-On Delay Time | 9.6ns |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | 175°C |
| Mounting | Through Hole |
| Packaging | Bulk |
| Pins | 3 |
| Family | IRF9520 |
| Width | 4.7mm |
| Height | 8.76mm |
| Product Length | 10.54mm |
| Product Type | MOSFET |