| Package | TO-220-3 | 
| Transistor Polarity | N | 
| Maximum Drain Source Voltage | 100 V | 
| Maximum Continuous Drain Current | 12 A | 
| Maximum Gate Source Voltage | ±10V | 
| Power Dissipation | 60 W | 
| Number of Elements per Chip | 1 | 
| Maximum Forward Voltage | 100VDC | 
| Output Power | 60W | 
| Peak Non-Repetitive Surge Current | 30A | 
| Maximum Reverse Current | 50uA | 
| Channel Mode | N-Channel Enhancement | 
| Peak Reverse Recovery Time | 150ns | 
| Channel Type | N | 
| Repetitive Peak Reverse Voltage | 100VDC | 
| Configuration | Single | 
| Maximum Drain Source Resistance | 0.2 Ohms@5V | 
| Category | Power MOSFET | 
| Maximum Forward Current | 12A | 
| Typical Fall Time | 80ns | 
| Typical Input Capacitance @ Vds | 900pF @25V | 
| Typical Rise Time | 70ns | 
| Typical Turn-Off Delay Time | 100ns | 
| Typical Turn-On Delay Time | 15ns | 
| Minimum Operating Temperature | -55°C | 
| Maximum Operating Temperature | 150°C | 
| Mounting | Through Hole | 
| Packaging | Rail | 
| Pins | 3 | 
| Family | RFP12N10L | 
| Width | 4.57mm | 
| Height | 9.02mm | 
| Product Length | 10.28mm | 
| Product Type | MOSFET |