| Package | TO-220-3 | 
| Transistor Polarity | P | 
| Maximum Drain Source Voltage | -200 V | 
| Maximum Continuous Drain Current | -6.5 A | 
| Maximum Gate Source Voltage | ±20V | 
| Power Dissipation | 74 W | 
| Number of Elements per Chip | 1 | 
| Maximum Forward Voltage | -200VDC | 
| Output Power | 74W | 
| Peak Non-Repetitive Surge Current | -26A | 
| Maximum Reverse Current | -500uA | 
| Channel Mode | P-Channel Enhancement | 
| Peak Reverse Recovery Time | 28ns | 
| Channel Type | P | 
| Repetitive Peak Reverse Voltage | -200VDC | 
| Configuration | Single | 
| Maximum Drain Source Resistance | 0.8 Ohms@10V | 
| Category | Power MOSFET | 
| Maximum Forward Current | -6.5A | 
| Typical Fall Time | 24ns | 
| Typical Gate Charge @ Vgs | 29nC @10V | 
| Typical Input Capacitance @ Vds | 700pF@25V | 
| Typical Rise Time | 27ns | 
| Typical Turn-Off Delay Time | 28ns | 
| Typical Turn-On Delay Time | 12ns | 
| Minimum Operating Temperature | -55°C | 
| Maximum Operating Temperature | 150°C | 
| Mounting | Through Hole | 
| Packaging | Bulk | 
| Pins | 3 | 
| Family | IRF | 
| Width | 4.7mm | 
| Height | 8.76mm | 
| Product Length | 10.54mm | 
| Product Type | MOSFET |