| Package | TO-220-3 |
| Transistor Polarity | N |
| Maximum Drain Source Voltage | 60 V |
| Maximum Continuous Drain Current | 50 A |
| Maximum Gate Source Voltage | ±25V |
| Power Dissipation | 120 W |
| Number of Elements per Chip | 1 |
| Maximum Forward Voltage | 60VDC |
| Output Power | 120W |
| Peak Non-Repetitive Surge Current | 200A |
| Maximum Reverse Current | 10uA |
| Channel Mode | N-Channel Enhancement |
| Peak Reverse Recovery Time | 105ns |
| Channel Type | N |
| Repetitive Peak Reverse Voltage | 60VDC |
| Configuration | Single |
| Maximum Drain Source Resistance | 0.022 Ohms@10V |
| Category | Power MOSFET |
| Maximum Forward Current | 50A |
| Typical Fall Time | 65ns |
| Typical Gate Charge @ Vgs | 31nC@10V |
| Typical Input Capacitance @ Vds | 1180pF@25V |
| Typical Rise Time | 105ns |
| Typical Turn-Off Delay Time | 60ns |
| Typical Turn-On Delay Time | 15ns |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | 175°C |
| Mounting | Through Hole |
| Packaging | Rail |
| Pins | 3 |
| Family | FQP50N06 |
| Width | 4.5mm |
| Height | 9.2mm |
| Product Length | 9.9mm |
| Product Type | MOSFET |