| Package | TO-92-3 |
| Transistor Polarity | N |
| Maximum Drain Source Voltage | 500 V |
| Maximum Continuous Drain Current | 380 mA |
| Maximum Gate Source Voltage | ±30V |
| Power Dissipation | 2 W |
| Number of Elements per Chip | 1 |
| Maximum Forward Voltage | 500VDC |
| Output Power | 2W |
| Peak Non-Repetitive Surge Current | 0.38A |
| Maximum Reverse Current | 50uA |
| Channel Mode | N-Channel Enhancement |
| Peak Reverse Recovery Time | 188ns |
| Channel Type | N |
| Repetitive Peak Reverse Voltage | 500VDC |
| Configuration | Single |
| Maximum Drain Source Resistance | 6.0 Ohms@10V |
| Category | Power MOSFET |
| Maximum Forward Current | 0.38A |
| Typical Fall Time | 15ns |
| Typical Gate Charge @ Vgs | 6.4nC@10V |
| Typical Input Capacitance @ Vds | 195pF@10V |
| Typical Rise Time | 10ns |
| Typical Turn-Off Delay Time | 20ns |
| Typical Turn-On Delay Time | 10ns |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | 150°C |
| Mounting | Through Hole |
| Packaging | Bulk |
| Pins | 3 |
| Family | FQN |
| Width | 2.41mm |
| Height | 4.01mm |
| Product Length | 4.77mm |
| Product Type | MOSFET |